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| STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 , 4 A, PowerMESHTM Power MOSFET in TO-220, TO-247, TO-3PF Features Type STFW4N150 STP4N150 STW4N150 VDSS 1500 V 1500 V 1500 V RDS(on) max <7 <7 <7 ID 4A 4A 4A Pw 63 W 160 W 160 W TO-220 TO-247 3 1 2 2 1 3 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic packages Creepage distance path is 5.4 mm (typ.) for TO-3PF Figure 1. TO-3PF 3 1 2 Application Internal schematic diagram. Switching applications Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Marking 4N150 P4N150 W4N150 Package TO-3PF TO-220 TO-247 Packaging Tube Tube Tube Order codes STFW4N150 STP4N150 STW4N150 July 2009 Doc ID 11262 Rev 9 1/15 www.st.com 15 Contents STFW4N150, STP4N150, STW4N150 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT VISO Tstg Tj Absolute maximum ratings Value Parameter TO-220 Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Storage temperature Max. operating junction temperature -55 to 150 150 4 2.5 12 160 TO-247 1500 30 4 2.5 12 4 (1) 2.5 (1) 12 (1) 63 3500 TO-3PF V V A A A W V C C Unit 1. Pulse width limited by safe operating area Table 3. Symbol Thermal data Value Parameter TO-220 TO-247 0.78 62.5 50 TO-3PF 2 C/W C/W Thermal resistance junction-case max Thermal resistance junctionambient max Unit Rthj-case Rthj-amb Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Value 4 350 Unit A mJ Doc ID 11262 Rev 9 3/15 Electrical characteristics STFW4N150, STP4N150, STW4N150 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 C VGS = 30 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A nA V Table 6. Symbol gfs (1) Ciss Coss Crss td(on) Tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 30 V, ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. Max. 3.5 1300 120 12 35 30 45 45 30 10 9 50 Unit S pF pF pF ns ns ns ns nC nC nC - VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V Figure 19 VDD = 600 V, ID = 4 A, VGS = 10 V Figure 20 - - 1. Pulsed: pulse duration=300 s, duty cycle 1.5% 4/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100 A/s VDD = 45 V Figure 21 ISD = 4 A, di/dt = 100 A/s VDD = 45 V, Tj = 150C Figure 21 Test conditions Min. 510 3 12 615 4 12.6 Typ. Max. 4 12 2 Unit A A V ns C A ns C A - - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Doc ID 11262 Rev 9 5/15 Electrical characteristics STFW4N150, STP4N150, STW4N150 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. ID (A) Safe operating area for TO-3PF AM03935v1 Figure 5. K Thermal impedance for TO-3PF TO3PF =0.5 0.2 0.1 10s 100s 1ms Tj=150C Tc=25C Sinlge pulse 10ms 10 is Op Lim era ite tion d by in th m is ax ar R ea n) DS (o 1 10 -1 0.05 0.02 0.01 Single pulse 0.1 0.01 0.1 1 10 100 1000 VDS(V) 10 -5 10 -2 10 -4 10 -3 10 -2 10 -1 t (s) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 11262 Rev 9 7/15 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STFW4N150, STP4N150, STW4N150 Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Test circuits 3 Test circuits Figure 20. Gate charge test circuit VDD 12V 2200 Figure 19. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform V(BR)DSS VD Figure 24. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 11262 Rev 9 9/15 Package mechanical data STFW4N150, STP4N150, STW4N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 Doc ID 11262 Rev 9 11/15 Package mechanical data STFW4N150, STP4N150, STW4N150 TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Package mechanical data TO-3PF mechanical data DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia mm. typ min. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 5.45 10 7627132_C Doc ID 11262 Rev 9 13/15 Revision history STFW4N150, STP4N150, STW4N150 5 Revision history Table 8. Date 29-Mar-2005 07-Jul-2005 07-Oct-2005 10-Aug-2006 06-Nov-2007 09-Apr-2008 21-Jan-2009 23-Feb-2009 23-Jul-2009 Document revision history Revision 1 2 3 4 5 6 7 8 9 Initial release Removed TO-220FP Document status promoted from preliminary data to datasheet Document reformatted, no content change Updated unit on Table 5: On/off states Added new packages: TO-220FH, TO-3PF Remove package TO-220FH Added PTOT value for TO-3PF PTOT (Table 2: Absolute maximum ratings) Added new figures: Figure 4: Safe operating area for TO-3PF and Figure 5: Thermal impedance for TO-3PF Changes 14/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 11262 Rev 9 15/15 |
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